NTD4909N-1G
MOSFET N-CH 30V 8.8A/41A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4909N-1G is an N-Channel Power MOSFET designed for applications requiring efficient power switching. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 8.8A at ambient temperature (Ta) and 41A at case temperature (Tc). With a low on-resistance (Rds On) of 8mOhm at 30A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device supports a gate drive voltage range from 4.5V to 10V and has a maximum gate charge of 17.5 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1314 pF at 15V. The NTD4909N-1G is available in an IPAK (TO-251-3 Short Leads) through-hole package, facilitating robust board mounting. Maximum power dissipation is 1.37W (Ta) or 29.4W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.37W (Ta), 29.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1314 pF @ 15 V |
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