NTD4906NT4G
MOSFET N-CH 30V 10.3A/54A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4906NT4G is a high-performance N-Channel power MOSFET designed for demanding applications. This component boasts a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 10.3A at ambient temperature and 54A at case temperature. Its low on-resistance of 5.5mOhm at 30A and 10V gate-to-source voltage (Vgs) ensures efficient power transfer. The device supports a wide drive voltage range from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 24 nC at 10V and a maximum input capacitance (Ciss) of 1932 pF at 15V. Power dissipation capabilities are 1.38W at ambient and 37.5W at case temperature. The NTD4906NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 37.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1932 pF @ 15 V |
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