NTD4906NAT4G
MOSFET N-CH 30V 10.3A/54A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MOSFET N-Channel, part number NTD4906NAT4G. This device features a 30 V drain-source voltage and offers a continuous drain current of 10.3 A at 25°C ambient temperature, scaling to 54 A under typical thermal conditions. With a low on-resistance of 5.5 mOhm at 30 A and 10 V Vgs, it is designed for efficient power switching applications. The gate charge is specified at a maximum of 24 nC at 10 V, and input capacitance (Ciss) is 1932 pF at 15 V. The NTD4906NAT4G is housed in a TO-252-3, DPAK package for surface mounting and is supplied on tape and reel. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1932 pF @ 15 V |
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