NTD4906NA-35G
MOSFET N-CH 30V 10.3A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4906NA-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30 V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 10.3 A at 25°C ambient temperature, scaling up to 54 A at 25°C case temperature. With a low on-resistance of 5.5 mOhm at 30 A and 10 V, it minimizes conduction losses. Key electrical parameters include a Gate Charge (Qg) of 24 nC maximum and Input Capacitance (Ciss) of 1932 pF maximum. The device utilizes Metal Oxide technology and is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1932 pF @ 15 V |
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