NTD4906N-35G
MOSFET N-CH 30V 10.3A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD4906N-35G is a N-Channel Power MOSFET designed for through-hole mounting in an IPAK (TO-251-3 Stub Leads) package. This device features a 30V drain-source breakdown voltage and offers a continuous drain current of 10.3A at 25°C ambient temperature, scaling to 54A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 5.5mOhm at 30A and 10V Vgs. Key electrical parameters include a maximum gate charge (Qg) of 24 nC at 10V Vgs and a maximum input capacitance (Ciss) of 1932 pF at 15V Vds. The device supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 2.2V at 250µA. Power dissipation is rated at 1.38W (Ta) and 37.5W (Tc). This MOSFET is suitable for applications in automotive and industrial power switching.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 37.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1932 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
