NTD4906N-1G
MOSFET N-CH 30V 10.3A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi NTD4906N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. It features a drain-source voltage (Vdss) of 30V and offers a continuous drain current of 10.3A at 25°C ambient (Ta) and 54A at 25°C case (Tc). The device exhibits a low on-resistance (Rds On) of 5.5mOhm maximum at 30A and 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 24 nC maximum at 10V Vgs and input capacitance (Ciss) of 1932 pF maximum at 15V Vds. The NTD4906N-1G is housed in an IPAK (TO-251-3 Short Leads) package for through-hole mounting, suitable for applications requiring robust thermal performance with a maximum power dissipation of 1.38W (Ta) and 37.5W (Tc). This component is commonly utilized in automotive, industrial, and consumer electronics power management solutions. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta), 37.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1932 pF @ 15 V |
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