NTD4905NT4G
MOSFET N-CH 30V 12A/67A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4905NT4G is an N-Channel Power MOSFET engineered for demanding applications. This device features a 30V drain-source voltage rating and supports continuous drain currents of 12A at 25°C ambient or 67A at 25°C case temperature. With a low on-resistance of 4.5mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 1.4W ambient or 44W case, and operates across a wide temperature range of -55°C to 175°C. Key parameters include a gate charge of 33 nC and input capacitance of 2340 pF. The NTD4905NT4G is housed in a TO-252-3, DPAK surface-mount package, suitable for power management, automotive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 15 V |
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