NTD4904N-35G
MOSFET N-CH 30V 13A/79A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4904N-35G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 13 A at 25°C ambient, escalating to 79 A under continuous drain at 25°C case temperature. The on-resistance (Rds On) is specified at a low 3.7 mOhm maximum at 30 A and 10 V gate drive. Power dissipation capabilities are rated at 1.4 W (Ta) and 52 W (Tc). The NTD4904N-35G utilizes MOSFET technology and is housed in a TO-251-3 Stub Leads, IPAK (TO-251AA) package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 41 nC at 10 V and input capacitance (Ciss) of 3052 pF maximum at 15 V. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3052 pF @ 15 V |
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