NTD4865N-35G
MOSFET N-CH 25V 8.5A/44A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4865N-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 8.5 A at 25°C ambient and 44 A at 25°C case temperature. With a low on-resistance (Rds On) of 10.9 mOhm maximum at 30 A and 10 V gate drive, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V and has a maximum gate charge (Qg) of 10.8 nC at 4.5 V. Input capacitance (Ciss) is specified at 827 pF maximum at 12 V. The NTD4865N-35G is housed in an IPAK (TO-251-3 Stub Leads) package suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C. Power dissipation is rated at 1.27 W (Ta) and 33.3 W (Tc). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 33.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 827 pF @ 12 V |
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