NTD4865N-1G
MOSFET N-CH 25V 8.5A/44A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD4865N-1G is an N-Channel Power MOSFET, designed for through-hole mounting in an IPAK package (TO-251-3 Short Leads, TO-251AA). This device features a drain-source voltage (Vdss) of 25V. Continuous drain current (Id) is rated at 8.5A at ambient temperature (Ta) and 44A at case temperature (Tc). Maximum power dissipation is 1.27W (Ta) and 33.3W (Tc). Key parameters include a maximum Rds(On) of 10.9mOhm at 30A and 10V, with a gate-source voltage (Vgs) range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. Gate charge (Qg) is 10.8 nC maximum at 4.5V, and input capacitance (Ciss) is 827 pF maximum at 12V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 33.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 827 pF @ 12 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
