NTD4863NAT4G
MOSFET N-CH 25V 9.2A/49A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4863NAT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 9.2 A at an ambient temperature of 25°C, and 49 A under typical conditions at 25°C case temperature. With a low on-resistance (Rds On) of 9.3 mOhm at 30 A and 10 V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 1.27 W (Ta) and 36.6 W (Tc), supporting operation across a wide temperature range from -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 13.5 nC at 4.5 V and input capacitance (Ciss) of 990 pF at 12 V. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration, this component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 36.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 12 V |
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