NTD4863NA-1G
MOSFET N-CH 25V 9.2A/49A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD4863NA-1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a Drain-Source Voltage (Vdss) of 25V and offers continuous drain current capabilities of 9.2A at ambient temperature and 49A at case temperature. Its low on-resistance, specified as 9.3mOhm maximum at 30A and 10V, ensures minimal conduction losses. The device exhibits a maximum gate charge (Qg) of 13.5 nC at 4.5V and input capacitance (Ciss) of 990 pF at 12V. With a maximum power dissipation of 1.27W (Ta) and 36.6W (Tc), it is suitable for demanding thermal environments. The NTD4863NA-1G utilizes TO-251-3 Short Leads, IPAK packaging, allowing for through-hole mounting. This MOSFET is commonly employed in automotive and industrial power switching circuits. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 36.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 12 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
