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NTD4863N-35G

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NTD4863N-35G

MOSFET N-CH 25V 9.2A/49A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4863N-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 25V drain-source voltage rating and offers continuous drain current capabilities of 9.2A at 25°C ambient and 49A at 25°C case temperature. The low on-resistance, specified at a maximum of 9.3mOhm at 30A and 10V gate drive, ensures minimal conduction losses. With a gate charge of 13.5 nC at 4.5V and an input capacitance of 990 pF at 12V, it supports fast switching frequencies. This through-hole component is housed in the TO-251-3 Stub Leads, IPAK package, enabling robust thermal management with a maximum power dissipation of 1.27W (ambient) and 36.6W (case). Its operational temperature range spans from -55°C to 175°C. The NTD4863N-35G is commonly utilized in automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 12 V

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