NTD4863N-1G
MOSFET N-CH 25V 9.2A/49A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4863N-1G is an N-Channel Power MOSFET offering a 25V drain-source voltage. This component features a low on-resistance of 9.3mOhm at 30A and 10V Vgs, with a continuous drain current capability of 9.2A (Ta) and 49A (Tc). Gate charge is specified at 13.5 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is a maximum of 990 pF at 12V Vds. Designed for through-hole mounting, it is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA). The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. Maximum power dissipation is 1.27W (Ta) and 36.6W (Tc). This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 36.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 12 V |
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