NTD4860NT4G
MOSFET N-CH 25V 10.4A/65A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4860NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 25V Drain-Source Voltage (Vdss) and high continuous drain current capabilities of 10.4A at ambient temperature (Ta) and 65A at case temperature (Tc). With a low on-resistance of 7.5mOhm at 30A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 1.28W (Ta) and 50W (Tc). Key electrical parameters include a gate charge (Qg) of 16.5 nC at 4.5V and input capacitance (Ciss) of 1308 pF at 12V. The NTD4860NT4G operates efficiently across a wide temperature range of -55°C to 175°C (TJ). It is housed in a surface mount DPAK (TO-252-3, DPAK) package, supplied on tape and reel. This MOSFET is suitable for automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1308 pF @ 12 V |