NTD4860NA-1G
MOSFET N-CH 25V 10.4A/65A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4860NA-1G is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 25V, this component offers a continuous Drain Current (Id) of 10.4A at ambient temperature and 65A per onsemi's thermal management specifications. Its low on-resistance of 7.5mOhm at 30A and 10V ensures minimal conduction losses. The NTD4860NA-1G has a maximum power dissipation of 1.28W at ambient temperatures and 50W under thermal control conditions. Typical applications for this MOSFET include automotive power management, industrial motor control, and power supply units. Packaged in an IPAK (TO-251AA) through-hole configuration, it operates within a temperature range of -55°C to 175°C. Key electrical parameters include a Gate Charge (Qg) of 21.8 nC and Input Capacitance (Ciss) of 1308 pF at specified voltages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1308 pF @ 12 V |
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