NTD4860N-1G
MOSFET N-CH 25V 10.4A/65A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4860N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 10.4A at 25°C ambient, scaling to 65A at 25°C case temperature. With a maximum on-resistance (Rds On) of 7.5mOhm at 30A and 10V gate drive, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs(max)) of ±20V. Key parameters include a gate charge (Qg) of 16.5 nC at 4.5V and an input capacitance (Ciss) of 1308 pF at 12V. Power dissipation is rated at 1.28W (Ta) and 50W (Tc). The NTD4860N-1G is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package, suitable for through-hole mounting. This MOSFET is utilized in automotive and industrial power management systems where robust switching performance is required. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1308 pF @ 12 V |
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