NTD4858NAT4G
MOSFET N-CH 25V 11.2A/73A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD4858NAT4G is a N-Channel Power MOSFET featuring a 25 V drain-source voltage. This device offers a continuous drain current of 11.2 A at 25°C ambient temperature and 73 A at 25°C case temperature. Maximum power dissipation is 1.3 W (Ta) and 54.5 W (Tc). The on-resistance (Rds On) is a maximum of 6.2 mOhm at 30 A and 10 V. Key parameters include a gate charge of 19.2 nC @ 4.5 V and input capacitance of 1563 pF @ 12 V. The threshold voltage (Vgs(th)) is a maximum of 2.5 V @ 250 µA. This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and is supplied on tape and reel. It is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
