NTD4858NA-35G
MOSFET N-CH 25V 11.2A/73A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4858NA-35G, an N-Channel Power MOSFET, features a 25V drain-source breakdown voltage. It offers a continuous drain current of 11.2A at 25°C ambient and 73A at 25°C case temperature. The device has a low on-resistance of 6.2mOhm at 30A and 10V gate-source voltage. Power dissipation is rated at 1.3W (Ta) and 54.5W (Tc). Key parameters include a gate charge of 19.2 nC maximum at 4.5V and input capacitance of 1563 pF maximum at 12V. The NTD4858NA-35G utilizes Metal Oxide technology and is packaged in an IPAK (TO-251-3 Stub Leads). Operating temperature range is -55°C to 175°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V |
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