NTD4858NA-1G
MOSFET N-CH 25V 11.2A/73A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4858NA-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current capability of 11.2A at ambient temperature (Ta) and 73A at case temperature (Tc). With a low On-Resistance (Rds On) of 6.2mOhm at 30A and 10V, it minimizes conduction losses. The NTD4858NA-1G offers a maximum power dissipation of 1.3W (Ta) and 54.5W (Tc). Key parameters include a Gate Charge (Qg) of 19.2nC at 4.5V and Input Capacitance (Ciss) of 1563pF at 12V. This MOSFET is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) through-hole package, making it suitable for applications in automotive, industrial, and power supply sectors. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V |
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