NTD4858N-35G
MOSFET N-CH 25V 11.2A/73A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4858N-35G is an N-Channel Power MOSFET featuring a 25V drain-source voltage. It offers a continuous drain current of 11.2A at 25°C ambient temperature and 73A at 25°C case temperature. With a maximum on-resistance of 6.2mOhm at 30A and 10V gate drive, this component achieves 54.5W of power dissipation at 25°C case temperature. Key parameters include a gate charge of 19.2 nC at 4.5V and an input capacitance of 1563 pF at 12V. The device operates across a temperature range of -55°C to 175°C. Housed in an IPAK (TO-251-3 Stub Leads) package, this MOSFET is suitable for through-hole mounting. The NTD4858N-35G is commonly utilized in power management and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V |
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