NTD4857NT4G
MOSFET N-CH 25V 12A/78A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, part number NTD4857NT4G, offers a 25V drain-source voltage and a continuous drain current of 12A at 25°C ambient and 78A at 25°C case temperature. This DPAK package device features a low on-resistance of 5.7mOhm maximum at 30A and 10V gate-source voltage. Key parameters include a 24nC maximum gate charge at 4.5V and 1960pF maximum input capacitance at 12V drain-source voltage. Maximum power dissipation is rated at 1.31W (ambient) and 56.6W (case). The device supports gate drive voltages from 4.5V to 10V and operates across a wide temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.31W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 12 V |
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