NTD4857NAT4G
MOSFET N-CH 25V 12A/78A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4857NAT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 25 V and offers a continuous drain current (Id) of 12 A at 25°C ambient and 78 A at 25°C case temperature. The Rds On is a maximum of 5.7 mOhm at 30 A and 10 V, ensuring low conduction losses. Gate charge (Qg) is specified at 24 nC maximum at 4.5 V, with input capacitance (Ciss) at 1960 pF maximum at 12 V. Packaged in a TO-252-3, DPAK (SC-63) surface mount configuration, this MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). This part is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 12 V |
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