NTD4857NA-1G
MOSFET N-CH 25V 12A/78A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4857NA-1G is an N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 25V and offers a continuous drain current of 12A at ambient temperature (Ta) and 78A at case temperature (Tc). The low on-resistance, specified as 5.7mOhm at 30A and 10V, minimizes conduction losses. Key capacitance parameters include an input capacitance (Ciss) of 1960 pF at 12V and a gate charge (Qg) of 32 nC at 10V, facilitating efficient switching. The NTD4857NA-1G utilizes Through Hole mounting with the TO-251-3 Short Leads, IPAK package. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 12 V |
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