NTD4857N-1G
MOSFET N-CH 25V 12A/78A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4857N-1G is a 25 V N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This device offers a continuous drain current of 12 A at 25°C ambient and 78 A at 25°C case temperature. The low on-resistance is specified as 5.7 mOhm maximum at 30 A drain current and 10 V gate-source voltage. Key parameters include a gate charge of 24 nC maximum at 4.5 V gate-source voltage and an input capacitance of 1960 pF maximum at 12 V drain-source voltage. Maximum power dissipation is 1.31 W ambient and 56.6 W case. Operating temperature range is -55°C to 175°C. This component is suitable for applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.31W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 12 V |