NTD4856NT4G
MOSFET N-CH 25V 13.3A/89A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4856NT4G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 25 V and offers a continuous drain current of 13.3 A at 25°C ambient and 89 A at 25°C case temperature. The device exhibits a low on-resistance of 4.7 mOhm at 30 A and 10 V. Key electrical parameters include a Gate Charge (Qg) of 27 nC at 4.5 V and Input Capacitance (Ciss) of 2241 pF at 12 V. Power dissipation is rated at 1.33 W (Ta) and 60 W (Tc). The NTD4856NT4G utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK package, suitable for surface mounting. Operating temperatures range from -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.33W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2241 pF @ 12 V |
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