NTD4856N-1G
MOSFET N-CH 25V 13.3A/89A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4856N-1G, an N-Channel Power MOSFET, features a Drain-Source Voltage (Vdss) of 25 V. This device is specified for a continuous Drain Current (Id) of 13.3 A at 25°C ambient and 89 A at 25°C case temperature. The low on-resistance of 4.7 mOhm at 30 A and 10 V gate drive is achieved with a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. The NTD4856N-1G offers a maximum power dissipation of 1.33 W (Ta) and 60 W (Tc) and is housed in an IPAK (TO-251-3 Short Leads, IPAK) package for through-hole mounting. Key parameters include a gate charge (Qg) of 27 nC at 4.5 V and input capacitance (Ciss) of 2241 pF at 12 V. This component is suitable for applications in automotive and industrial power management. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.33W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2241 pF @ 12 V |
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