NTD4855NT4G
MOSFET N-CH 25V 14A/98A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4855NT4G is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 25 V and offers a continuous drain current (Id) of 14 A at 25°C ambient temperature, scaling to 98 A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 4.3 mOhm at 30 A and 10 V, achieved with a gate-source voltage (Vgs) drive range of 4.5 V to 10 V.
With a maximum power dissipation of 1.35 W (Ta) and 66.7 W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a maximum gate charge (Qg) of 32.7 nC at 4.5 V and a maximum input capacitance (Ciss) of 2950 pF at 12 V. The NTD4855NT4G is packaged in a TO-252-3, DPAK (SC-63) surface-mount configuration and operates across a temperature range of -55°C to 175°C. This component finds utility in automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.35W (Ta), 66.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 12 V |
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