NTD4855N-1G
MOSFET N-CH 25V 14A/98A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4855N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 25V and offers a continuous drain current (Id) of 14A at 25°C ambient or 98A at 25°C case temperature. The on-resistance (Rds On) is a key parameter, specified at a maximum of 4.3mOhm when driven at 30A and 10V Vgs. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 32.7 nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 2950 pF. This through-hole component is housed in a TO-251-3 Short Leads, IPAK, TO-251AA package, suitable for applications requiring robust thermal performance with a maximum power dissipation of 1.35W (Ta) or 66.7W (Tc). The NTD4855N-1G is utilized in industries such as automotive, industrial power control, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.35W (Ta), 66.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 12 V |
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