NTD4854NT4G
MOSFET N-CH 25V 15.7A/128A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4854NT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vds) of 25 V and offers a continuous drain current capability of 15.7 A at ambient temperature (Ta) and 128 A at case temperature (Tc). With a low on-resistance (Rds On) of 3.6 mOhm at 30 A and 10 V, it minimizes conduction losses. The NTD4854NT4G supports a wide gate drive voltage range from 4.5 V to 10 V, with a maximum gate charge (Qg) of 49.2 nC at 4.5 V and input capacitance (Ciss) of 4600 pF at 12 V. Power dissipation is rated at 1.43 W (Ta) and 93.75 W (Tc). This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. The operating junction temperature range is -55°C to 175°C. Applications include automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Ta), 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.43W (Ta), 93.75W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 12 V |
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