NTD4815NHT4G
MOSFET N-CH 30V 6.9A/35A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4815NHT4G is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage. This device offers a continuous drain current of 6.9A at 25°C ambient temperature and 35A at 25°C case temperature. Its low on-resistance of 15mOhm is achieved at 30A drain current and 10V gate-source voltage, with a typical drive voltage range of 4.5V to 11.5V. The NTD4815NHT4G features a maximum power dissipation of 1.26W (ambient) and 32.6W (case). The device is housed in a TO-252-3, DPAK package for surface mounting and operates across a wide temperature range of -55°C to 175°C. Key parameters include a maximum gate charge of 6.8nC at 4.5V Vgs and an input capacitance of 845pF at 12V Vds. This component is suitable for various applications including power management and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.26W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 12 V |
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