NTD4815NH-35G
MOSFET N-CH 30V 6.9A/35A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4815NH-35G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 6.9A at 25°C ambient, scaling to 35A at 25°C case temperature. With a low on-resistance (Rds On) of 15mOhm at 30A and 10V, it minimizes conduction losses. The device operates with gate drive voltages ranging from 4.5V to 11.5V, and a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 6.8 nC at 4.5V and input capacitance (Ciss) of 845 pF at 12V. The maximum power dissipation is 1.26W (Ta) and 32.6W (Tc). Packaged in an IPAK (TO-251-3 Stub Leads) for through-hole mounting, this MOSFET is suitable for automotive and industrial power management systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.26W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 12 V |
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