NTD4815NH-1G
MOSFET N-CH 30V 6.9A/35A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4815NH-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 6.9 A at 25°C ambient temperature, scaling to 35 A at 25°C case temperature. With a low on-resistance (Rds On) of 15 mOhm at 30 A and 10 V, it minimizes conduction losses. The device is specified for drive voltages ranging from 4.5 V to 11.5 V, with a gate threshold voltage (Vgs(th)) of 2.5 V at 250 µA. Key parameters include a maximum gate charge (Qg) of 6.8 nC at 4.5 V and an input capacitance (Ciss) of 845 pF at 12 V. Power dissipation is rated at 1.26 W (Ta) and 32.6 W (Tc). The NTD4815NH-1G is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. This component is utilized across various industries, including automotive and industrial power management. It operates within an ambient temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.26W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 12 V |
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