NTD4815N-35G
MOSFET N-CH 30V 6.9A/35A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4815N-35G is an N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This device features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current of 6.9 A at 25°C ambient and 35 A at 25°C case temperature. With a maximum On-Resistance (Rds On) of 15 mOhm at 30 A and 10 V, it provides efficient power handling. The NTD4815N-35G has a maximum power dissipation of 1.26 W (Ta) and 32.6 W (Tc). Gate drive parameters include Vgs(th) of 2.5 V (max) and a gate charge (Qg) of 14.1 nC (max) at 11.5 V. Input capacitance (Ciss) is 770 pF (max) at 12 V. This MOSFET operates across a wide temperature range from -55°C to 175°C (TJ). Applications include automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.26W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 11.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 12 V |