NTD4815N-1G
MOSFET N-CH 30V 6.9A/35A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4815N-1G is an N-Channel MOSFET designed for robust power switching applications. This through-hole component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.9A at ambient temperature (Ta) and 35A at case temperature (Tc). With a maximum power dissipation of 1.26W (Ta) and 32.6W (Tc), it is suitable for demanding environments. The device exhibits a low on-resistance (Rds On) of 15mOhm at 30A and 10V, facilitated by a gate drive voltage range of 4.5V to 11.5V. Key electrical characteristics include a maximum gate charge of 6.6 nC at 4.5V and an input capacitance of 770 pF at 12V. Operating across an extended temperature range of -55°C to 175°C (TJ), this MOSFET in the IPAK package is utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.26W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 12 V |
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