NTD4813NT4G
MOSFET N-CH 30V 7.6A/40A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4813NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 7.6A at 25°C ambient and 40A at 25°C case temperature. With a low on-resistance (Rds On) of 13mOhm maximum at 30A and 10V, it is optimized for efficient power switching. The NTD4813NT4G supports gate drive voltages from 4.5V to 11.5V, with a maximum gate charge (Qg) of 7.9 nC at 4.5V. Its input capacitance (Ciss) is rated at a maximum of 860 pF at 12V. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivering a maximum power dissipation of 1.27W (Ta) and 35.3W (Tc). Operating across a junction temperature range of -55°C to 175°C, this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 35.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 12 V |
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