NTD4813NH-35G
MOSFET N-CH 30V 7.6A/40A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4813NH-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current of 7.6A at ambient temperature (Ta) and 40A at case temperature (Tc). The on-resistance (Rds On) is specified at a maximum of 13mOhm at 30A and 10V Vgs. The device supports gate drive voltages from 4.5V to 11.5V, with a maximum gate charge (Qg) of 10nC at 4.5V Vgs and maximum input capacitance (Ciss) of 940pF at 12V Vds. Power dissipation is rated at 1.27W (Ta) and 35.3W (Tc). The NTD4813NH-35G is housed in an IPAK (TO-251-3) package suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 35.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 12 V |
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