NTD4813NH-1G
MOSFET N-CH 30V 7.6A/40A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4813NH-1G is an N-Channel Power MOSFET designed for robust performance. This component offers a Drain-to-Source Voltage (Vdss) of 30V and supports a continuous drain current of 7.6A at ambient temperature (Ta) and 40A at case temperature (Tc). With a maximum Rds On of 13mOhm at 30A and 10V Vgs, it minimizes conduction losses. The device features a low gate charge (Qg) of 10 nC at 4.5V and an input capacitance (Ciss) of 940 pF (max) at 12V. Power dissipation is rated at 1.27W (Ta) and 35.3W (Tc). Operating across a wide temperature range from -55°C to 175°C (TJ), it is housed in an IPAK (TO-251-3 Short Leads) package, suitable for through-hole mounting. This MOSFET is utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 35.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 12 V |
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