NTD4813N-1G
MOSFET N-CH 30V 7.6A/40A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4813N-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 7.6A at ambient temperature and 40A at case temperature. With a low on-resistance of 13mOhm at a gate-source voltage of 10V and drain current of 30A, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 11.5V and has a maximum gate charge of 7.9 nC at 4.5V. Its input capacitance (Ciss) is a maximum of 860 pF at 12V. The NTD4813N-1G boasts a maximum power dissipation of 1.27W (Ta) and 35.3W (Tc), operating across a temperature range of -55°C to 175°C. Packaged in an IPAK (TO-251AA) form factor, this MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.27W (Ta), 35.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 12 V |
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