NTD4810NT4G
MOSFET N-CH 30V 9A/54A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4810NT4G is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 9 A at ambient temperature (Ta) and 54 A at case temperature (Tc). With a low on-resistance (Rds On) of 10 mOhm at 30 A and 10 V, it minimizes conduction losses, achieving a maximum power dissipation of 1.4 W (Ta) and 50 W (Tc). The NTD4810NT4G utilizes advanced MOSFET technology and is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 11 nC at 4.5 V and input capacitance (Ciss) of 1350 pF @ 12 V. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12 V |
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