NTD4810NH-1G
MOSFET N-CH 30V 9A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4810NH-1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 9A at ambient temperature and 54A at case temperature. With a maximum on-resistance of 10mOhm at 30A and 10V, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 11.5V, with a typical gate charge of 12 nC at 4.5V. Its IPAK package (TO-251-3 Short Leads) facilitates robust thermal management, allowing for a maximum power dissipation of 1.28W (Ta) and 50W (Tc). Operating across a wide temperature range of -55°C to 175°C, the NTD4810NH-1G is suitable for use in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 12 V |
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