NTD4810N-35G
MOSFET N-CH 30V 9A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4810N-35G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 9A at ambient temperature and 54A at case temperature. With a low on-resistance (Rds On) of 10mOhm at 30A and 10V, it minimizes conduction losses. The device has a maximum gate charge (Qg) of 11 nC at 4.5V and an input capacitance (Ciss) of 1350 pF at 12V. Power dissipation is rated at 1.4W (Ta) and 50W (Tc). The NTD4810N-35G is housed in an IPAK (TO-251-3 Stub Leads) package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12 V |
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