NTD4810N-1G
MOSFET N-CH 30V 9A/54A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4810N-1G is an N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 9A at ambient temperature and 54A at case temperature. The NTD4810N-1G exhibits a low on-resistance of 10mOhm maximum at 30A drain current and 10V gate-source voltage. It has a gate charge of 11 nC maximum at 4.5V Vgs and an input capacitance of 1350 pF maximum at 12V Vds. Power dissipation is rated at 1.4W (Ta) and 50W (Tc). The operating junction temperature range is from -55°C to 175°C. This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12 V |
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