NTD4809NHT4G
MOSFET N-CH 30V 9.6A/58A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4809NHT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 9.6A at 25°C ambient (Ta) and 58A at 25°C case (Tc). Its low on-resistance (Rds On) of 9mOhm at 30A and 10V ensures efficient power transfer. The NTD4809NHT4G has a maximum power dissipation of 1.3W (Ta) and 52W (Tc), with a junction temperature range of -55°C to 175°C. It is packaged in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 15 nC at 4.5V and input capacitance (Ciss) of 2155 pF at 12V. This device is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 12 V |
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