NTD4809NH-1G
MOSFET N-CH 30V 9.6A/58A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4809NH-1G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current (Id) capability of 9.6 A at ambient temperature (Ta) and 58 A at case temperature (Tc). With a low on-resistance (Rds On) of 9 mOhm at 30 A and 10 V, it minimizes conduction losses. The device is rated for a maximum power dissipation of 1.3 W (Ta) and 52 W (Tc). Key parameters include a Gate Charge (Qg) of 15 nC at 4.5 V and an Input Capacitance (Ciss) of 2155 pF at 12 V. The NTD4809NH-1G utilizes a Metal Oxide technology and is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA) suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is widely adopted in power supply units, automotive applications, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 12 V |
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