NTD4809NAT4G
MOSFET N-CH 30V 9.6A/58A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4809NAT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 9.6A at a typical ambient temperature (Ta) and 58A under pulsed conditions or at case temperature (Tc). Its low on-resistance of 9mOhm at 30A and 10V Vgs ensures minimal conduction losses. Featuring a 4.5V gate drive capability and a typical gate charge of 13nC at 4.5V, it is suitable for high-frequency switching. The MOSFET is housed in a TO-252-3, DPAK surface mount package, facilitating dense board layouts. Key parameters include input capacitance (Ciss) of 1456pF at 12V and a maximum operating temperature of 175°C. This component finds application in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1456 pF @ 12 V |
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