NTD4809NA-1G
MOSFET N-CH 30V 9.6A/58A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4809NA-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 9.6A at 25°C ambient and 58A at 25°C case temperature. The maximum power dissipation is 1.3W (Ta) and 52W (Tc). With a low on-resistance of 9mOhm at 30A and 10V, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, it offers excellent conduction losses. The device operates within a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 13 nC at 4.5 V and input capacitance (Ciss) of 1456 pF at 12 V. The NTD4809NA-1G is packaged in an IPAK (TO-251-3 Short Leads, IPAK, TO-251AA) and is suitable for use in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1456 pF @ 12 V |
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