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NTD4809N-1G

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NTD4809N-1G

MOSFET N-CH 30V 9.6A/58A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD4809N-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current capability of 9.6 A at 25°C ambient temperature and 58 A at 25°C case temperature. With a low on-resistance (Rds On) of 9 mOhm at 30 A and 10 V, it minimizes conduction losses. The device operates with gate drive voltages ranging from 4.5 V to 11.5 V, and its maximum gate charge (Qg) is 13 nC at 4.5 V. Input capacitance (Ciss) is specified at a maximum of 1456 pF at 12 V. The NTD4809N-1G offers a power dissipation of 1.4 W (Ta) and 52 W (Tc). Housed in an IPAK (TO-251-3 Short Leads) package, it is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This MOSFET is utilized in industries such as automotive and industrial power control.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1456 pF @ 12 V

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