NTD4808NT4G
MOSFET N-CH 30V 10A/63A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD4808NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-source breakdown voltage and offers a continuous drain current capability of 10 A at ambient temperature and 63 A at case temperature. With a low on-resistance of 8 mOhm at 30 A and 10 V, the NTD4808NT4G minimizes conduction losses.
This MOSFET boasts a maximum power dissipation of 1.4 W (Ta) or 54.6 W (Tc), supported by a wide operating temperature range of -55°C to 175°C. The gate charge (Qg) is specified at 13 nC maximum at 4.5 V Vgs, and input capacitance (Ciss) is 1538 pF maximum at 12 V Vds. The NTD4808NT4G is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 surface-mount package, ideal for space-constrained designs. This component is commonly utilized in automotive, industrial, and power supply applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 54.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1538 pF @ 12 V |
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