NTD4808N-35G
MOSFET N-CH 30V 10A/63A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD4808N-35G is an N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current capability of 10 A at 25°C ambient (Ta) and 63 A at 25°C case (Tc). The NTD4808N-35G exhibits a low on-resistance (Rds On) of 8 mOhm maximum at 30 A and 10 V gate-source voltage (Vgs). Power dissipation is rated at 1.4 W (Ta) and 54.6 W (Tc). Key parameters include a gate charge (Qg) of 13 nC maximum at 4.5 V Vgs and input capacitance (Ciss) of 1538 pF maximum at 12 V drain-source voltage. It is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, automotive applications, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 54.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1538 pF @ 12 V |
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